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Author (up) Chang, Y.C.; Larrain, F.A.; Fuentes-Hernandez, C.; Park, Y.; Kippelen, B. doi  openurl
  Title Solution-based electrical doping of organic photovoltaics with non-fullerene acceptors facilitated by solvent vapor pre-treatment Type
  Year 2024 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 14 Issue 1 Pages 015247  
  Keywords SEMICONDUCTING POLYMER-FILMS; EFFICIENCY  
  Abstract Solution-based electrical doping of organic semiconductors using 12-molybdophosphoric acid (PMA) hydrate has been shown to allow p-type doping of conjugated polymers over a limited depth from the surface, enabling the fabrication of organic solar cells with a simplified device architecture. However, the doping level of certain conjugated polymers using PMA was found to be limited by the polymer film volume. Here, we report a modified PMA doping technique based on film volume expansion that is applicable to device fabrication, leading to hole-collecting layer-free non-fullerene organic photovoltaic devices, which exhibit a comparable photovoltaic performance to those with a commonly evaporated MoO3 hole-collecting layer. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).  
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  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001151322100004 Approved  
  Call Number UAI @ alexi.delcanto @ Serial 1943  
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Author (up) Chang, Y.C.; Larrain, F.A.; Fuentes-Hernandez, C.; Park, Y.; Kippelen, B. doi  openurl
  Title Inverted organic tandem solar cells with a charge recombination stack employing spatially confined p-type electrical doping Type
  Year 2023 Publication Journal of Applied Physics Abbreviated Journal J. Appl. Phys.  
  Volume 134 Issue 9 Pages 095502  
  Keywords SEMICONDUCTING POLYMER-FILMS; LAYER  
  Abstract We report on the application of solution-based p-type electrical doping using 12-molybdophosphoric acid hydrate (PMA) to the fabrication of organic tandem solar cells. Such a doping approach leads to a spatially confined vertical doping profile down to a limited depth from the surface of polymer films, thus allowing the hole-collecting component of the charge recombination stack to be embedded in the photoactive layer of the bottom sub-cell. This simplifies the device architecture by removing the need for an extra dedicated hole-collecting layer. It is shown that this novel charge recombination stack comprising a PMA-doped bottom photoactive layer and a trilayer of Ag/AZO/PEIE is compatible with a solution-processed top photoactive layer. The fabricated inverted organic tandem solar cells exhibit an open-circuit voltage that is close to the sum of the open-circuit voltages of the individual sub-cells, and a fill factor that is close to the better fill factor of the two sub-cells.  
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  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001063559900006 Approved  
  Call Number UAI @ alexi.delcanto @ Serial 1890  
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Author (up) Nam, M.; Park, Y.; Lee, C.; Kim, G.; Larrain, F.A.; Fuente-Hernandez, C.; Ko, D.H.; Kippelen, B. doi  openurl
  Title Single-layer organic photovoltaics fabricated via solution-based electrical doping of ternary bulk heterojunction films Type
  Year 2023 Publication Chemical Engineering Journal Abbreviated Journal Chem. Eng. J.  
  Volume 466 Issue Pages 143340  
  Keywords Organic photovoltaics; Single -layer geometry; Electrical doping; Phosphomolybdic acid; Ternary bulk heterojunction; Indoor energy harvesting  
  Abstract The commercial viability of organic photovoltaics (OPVs) can be improved by simplifying their device geometry and easing fabrication complexity. Here, we demonstrate that solution-based p-type electrical doping of ternary bulk heterojunction (BHJ) films, which comprise 2 donor polymers and 1 fullerene acceptor (2D:1A), enables the realization of efficient single-layer OPVs. Systematic and detailed investigations of the optoelectronic charac-teristics of films with varying donor ratios, and their photovoltaic performance, demonstrate p-type electrical doping via post-process immersion into a 12-molybdophosphoric acid hydrate (PMA) solution, resulting in a reduced trap density and charge recombination without significantly changing the BHJ morphology. Further-more, PMA doping of films comprising optimized ternary blend compositions and polyethylenimine enables the demonstration of single-layer OPVs with economic top electrode metals and a high level of performance under outdoor and indoor illumination conditions. These PMA-doped 2D:1A BHJ films are an attractive platform to reduce the efficiency-cost gap and accelerate the commercialization of OPVs for emerging applications.  
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  ISSN 1385-8947 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001007214500001 Approved  
  Call Number UAI @ alexi.delcanto @ Serial 1823  
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Author (up) Park, Y.; Fuentes-Hernandez, C.; Kim, K.; Chou, W.F.; Larrain, F.A.; Graham, S.; Pierron, O.N.; Kippelen, B. doi  openurl
  Title Skin-like low-noise elastomeric organic photodiodes Type
  Year 2021 Publication Sciences Advances Abbreviated Journal Sci. Adv.  
  Volume 7 Issue 51 Pages eabj6565  
  Keywords MECHANICAL-PROPERTIES; POLYMER  
  Abstract Stretchable optoelectronics made of elastomeric semiconductors could enable the integration of intelligent systems with soft materials, such as those of the biological world. Organic semiconductors and photodiodes have been engineered to be elastomeric; however, for photodetector applications, it remains a challenge to identify an elastomeric bulk heterojunction (e-BHJ) photoactive layer that combines a low Young's modulus and a high strain at break that yields organic photodiodes with low electronic noise values and high photodetector performance. Here, a blend of an elastomer, a donor-like polymer, and an acceptor-like molecule yields a skin-like e-BHJ with a Young's modulus of a few megapascals, comparable to values of human tissues, and a high strain at break of 189%. Elastomeric organic photodiodes based on e-BHJ photoactive layers maintain low electronic noise current values in the tens of femtoamperes range and noise equivalent power values in the tens of picowatts range under at least 60% strain.  
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  ISSN 2375-2548 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000730600400021 Approved  
  Call Number UAI @ alexi.delcanto @ Serial 1508  
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